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| SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS ISSUE 4 - MARCH 2000 PARTMARKING DETAILS FMMT3905 - 2W FMMT3906 - 2A FMMT3905 - FMMT3903 FMMT3906 - FMMT3904 FMMT3905 FMMT3906 C B E COMPLEMENTARY TYPES - ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage CollectorEmitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER SYMBOL FMMT3905 MIN BreakdownVoltages V(BR)CBO V(BR)CEO V(BR)EBO Cut-Off Currents Static Forward Current Transfer Ratio ICEX IBEX hFE 30 40 50 30 15 -40 -40 -5 -50 -50 60 80 100 60 30 SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg VALUE -40 -40 -5 -200 330 -55 to +150 UNIT V V V mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). FMMT3906. UNIT CONDITIONS. MAX V V V -50 -50 nA nA IC=-10A, IE=0 IC=-1mA, IB=0* IE=-10A, IC=0 VCE=-30V, VBE(off) =-3V VCE=-30V, VEB(off) =-3V IC=-0.1mA, VCE=-1V* IC=-1mA, VCE=-1V* IC=-10mA, VCE=-1V* IC=-50mA, VCE=-1V* IC=-100mA, VCE=-1V* V V IC=-10mA, IB=-1mA* IC=-50mA, IB=-5mA* IC=-10mA, IB=-1mA* IC=-50mA, IB=-5mA* -40 -40 -5 MAX MIN 150 300 Saturation Voltages VCE(sat) VBE(sat) -0.25 -0.4 0.25 0.4 -0.65 -0.85 -0.65 -0.85 V -0.95 -0.95 V 200 4.5 10 5 250 4.5 10 4 Transition Frequency Input Capacitance Noise Figure fT MHz IC=-10mA, VCE=-20V f=100MHz pF pF dB VCB=-5V, IE=0, f=100KHz VBE=0.5V, IC=0, f=100KHz IC=-200mA, VCE=-5V Rg=2k, f=30Hz to 15kHz at -3dB points Output Capacitance Cobo Cibo N *Measured under pulsed conditions. Pulse width=200s. Duty cycle =1% PAGE NUMBER FMMT3905 FMMT3906 SWITCHING CHARACTERISTICS (at Tamb=25 C unless otherwise stated) PARAMETER Delay Time Rise Time Storage Time Fall Time SYMBOL FMMT3905 MIN td tr ts tf MAX 35 35 200 60 FMMT3906 MIN MAX 35 35 225 75 ns ns ns ns VCC=-3V, VBE(off) =-0.5V IC=-10mA, IB1=-1mA (See Fig.1) VCC=-3V, IC=-10mA IB1=-IB2=-1mA (See Fig.2) UNIT CONDITIONS Delay and Rise Time Equivalent Test Circuit Storage and Fall Time Equivalent Test Circuit PAGE NUMBER |
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